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6407A BF909 A24CA ON1912 1N3600 GBPC2506 43240 MSK4401G
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  smd type transistors sot-223 unit: mm 3.00 +0.1 -0.1 0.70 +0.1 -0.1 2.9 4.6 6.50 +0.2 -0.2 3.50 +0.2 -0.2 0.90 +0.2 -0.2 7.00 +0.3 -0.3 1.65 +0.15 -0.15 0 .1max 0.90 +0.05 -0.05 12 4 3 1 base 2 collector 3 emitter features v ceo = 40v. 5 amp continuous current. 20 amp pulse current. low saturation voltage. high gain. extremely low equivalent on-resistance; r ce(sat) = 50m at 5a. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 150 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 5v peak pulse current i c 5a continuous collector current i cm 10 a base current i b 500 ma power dissipation p tot 2.5 w operating and storage temperature range t j, t stg -55to+150 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type transistors FZT1051A smd type transistors smd type transistors smd type transistors smd type product specification 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v (br)cbo i c =100a 150 190 v collector-emitter breakdown voltage * v (br)ceo i c =10ma 40 60 v emitter-base breakdown voltage v (br)ebo i e =100a 5 9 v collector cut-off current i cbo v cb =120v 0.3 10 na collector-emitter cut-off current i ces v ce =120v 0.3 10 na emitter cut-off current i ebo v eb =4v 0.3 10 na collector-emitter saturation voltage * v ce( sat) i c =0.2a, i b =10ma i c =1a, i b =10ma i c =2a, i b =20ma i c =5a, i b =100ma 17 85 140 250 25 120 180 340 mv base-emitter saturation voltage * v be( sat) i c =5a, i b =100ma 980 1100 mv base-emitter on voltage * v be(on )i c =5a, v ce =2v 915 1000 mv i c =10ma, v ce =2v* 290 440 i c =1a, v ce =2v* 270 450 1200 i c =5a, v ce =2v* 130 220 i c =10a, v ce =2v* 40 55 transitional frequency f t i c =50ma, v ce =10v f=100mhz 155 mhz output capacitance c obo v cb =10v, f=1mhz 27 40 pf turn-on time t (on) i c =3a, v cc =10v 220 ns turn-off time t (off) i b1 =i b2 =30ma 540 ns * pulse test: tp = 300 s; d 0.02. static forward current transfer ratio h fe FZT1051A sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type transistors smd type transistors smd type transistors smd type product specification 4008-318-123


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